Microscopy and Microanalysis 2017 (M&M)

Aug/06/2017 to Aug/10/2017 St. Louis, MO
The theme of the M&M 2017 meeting is “Anniversaries.”
At this meeting the Microscopy Society of America and the Microanalysis Society, which established the joint M&M meeting format more than twenty years ago, will celebrate their 75th and 50th anniversaries, respectively. We are pleased to unveil special commemorative logos for each society during this anniversary year. In addition, the M&M meeting is cosponsored for the first time by the International Field Emission Society to commemorate the 50th anniversary of the invention of the atom probe.

We will have the following instruments in our booth available for demonstrations during M&M 2017:

VEGA: TungstenVariable Pressure SEM
GAIA: Gallium FIB-SEM with Immersion Lens Workstation
MIRA: FE-SEM


E-mail us today to schedule a demonstration or register for a lunch and learn: cleary@tescan-usa.com.


TESCAN USA will also be featuring a new FIB-SEM, which will be available for demonstrations at M&M 2017.

We will have the following lunch and learn presentations:

Monday, August 7, 2017 12PM-1PM

A step ahead in FIB-SEM sample preparation – a new microscope from TESCAN

TESCAN is pleased to announce the launch of the first member of a new family of microscopes, a focused ion beam scanning electron microscope (FIB-SEM) that raises the bar on quality and throughput of high-end FIB-SEM applications such as sample preparation and microanalysis.This new microscope has all that it takes to meet the demands of today’s research in both the academia and industry.  It achieves field-free ultra-high resolution imaging and it is equipped with a robust in-beam detection system with angle-selective and energy-filtering capabilities. These features allow resolving nano-sized features of your samples whether they are organic, inorganic, conductive, non-conductive, magnetic, or non-magnetic. In addition, this dual beam system features a novel FIB column, the next generation of Ga source FIB column and a guarantee of world-class quality in sample preparation with the highest throughput.

Tuesday, August 8, 2017 12PM-1PM

3D Energy Dispersive X-ray Spectroscopy in the FIB-SEM Workstation

Three-dimensional FIB tomography allows for the quantification and reconstruction of 3D microstructures using a scanning electron microscope coupled with a focused ion beam for automated site-specific serial sectioning. With the addition of a silicon drift detector to the FIB-SEM workstation, chemistry information can be collected in conjunction with a 3D tomography imaging dataset. With EDAX’s TEAM™ 3D Imaging and Quant system, Energy Dispersive Spectroscopy (EDS) data can be efficiently interpreted and visualized through the 3D display of concentration color-coded elemental maps, and full spectral data can be extracted from any volumetric area of interest.

A Computational Approach to Improving SEM Image Quality

This talk will describe how computational software can be used to improve the resolution and quality of scanning electron microscope images. The process involves calculating the Point Spread Function (PSF) of an SEM and utilizing it along with advanced algorithms to restore an SEM image to what best describes the details of the original object. This talk will discuss the benefits of computational microscopy and will include a demonstration of the restoration process.

Wednesday, August 9, 2017 12PM-1PM

3D Orientation Imaging in the FIB-SEM Workstation

This Tescan USA and EDAX joint session will cover the topics of 3D FIB tomography and 3D electron backscatter electron diffraction (EBSD). The combination of a focused ion beam (FIB) with a SEM enables automated serial sectioning of materials in the nanometer and micrometer scale. Large volume 3D FIB tomography utilizes serial SEM imaging of consecutive cross-sections created with the xenon plasma FIB for 3D reconstruction and visualization of the structure. The main advantage of the xenon plasma ion source is the ability to mill large volumes with very high milling rates. With the addition of a high speed EBSD detector to the FIB-SEM workstation, crystal orientations can be collected in conjunction with a 3D tomography imaging dataset. Fully reconstructed data sets can then provide thorough understanding of the microstructure, complete characterization of grain boundaries, and correlation of grain orientations with microstructural features in three dimensions.

Tescan FIB-SEM Integrated with ToF-SIMS: The Opportunities

In this presentation, we will inform attendees of the novel opportunities when the plasma FIB or Gallium FIB is combined with a fully integrated Time-of-flight (ToF) Secondary Ion Mass Spectrometer (SIMS). The presentation will cover:
  • SIMS compared with other analytical techniques;
  • SIMS Process overview: Quad SIMS, MS SIMS, ToF-SIMS;
  • Technical distinctions of Tescan’s ToF-SIMS Instrumentation;
  • Sputtering process & the concept of ion yield;
  • Source options in Tescan’s FIB-SIMS configuration;
  • Quantification & minimum detection volume limit calculation;
  • Yield enhancement strategies;
  • Multi-variant analysis applied to ToF-SIMS;
  • Mass resolution & Chemistry;
  • Workflow & Data Examples;
  • Future possibilities.
Time-of-Flight SIMS coupled with a FIB-SEM adds a nanometer scale surface analysis capability to the FIB-SEM workstation. As it is an imaging spectrometer, the FIB-SIMS analysis inherently provides 3D hyperspectral retrospective tomographic data throughout the acquisition volume.
ToF FIB-SIMS integration has detection limits which can be several orders of magnitude better than EDS, especially for light elements. The orthogonal ion detection scheme yields lateral resolution of < 50nm, earning this platform a unique status in this metric and exceeding all but the most expensive dedicated SIMS instruments. The plasma FIB paired with the ToF-SIMS detector has particularly interesting application. The high milling rate of a plasma FIB make otherwise impractical depth profile volumes accessible, opening a host of potential new applications involving “thick” sections. ToF-SIMS detection limits also improve in proportion to the analysis volume.

Thursday, August 10, 2017 12PM-1PM

Particle Analysis in the SEM
This TESCAN USA lunch and learn tutorial will cover the topic of particle analysis in the SEM, addressing the measurement of individual particles and applying stereological principals to describe an entire sample. The benefits of SEM-based methods will be compared to other techniques for particle analysis. Sample preparation requirements for successful analysis in terms of accuracy and reproducibility will be reviewed followed by a description of typical image analysis workflow. Finally, several case studies will be presented to illustrate these concepts.

In addtion to activities in our booth, we have an evening tutorial on Monday, August 7, 2017 and Wednesday, August 9, 2017 at 5:45PM in our booth.  Registration for these evening tutorials takes place in the MSA Megabooth.  Please find the subject matter and abstract below:


Plasma FIB Deprocessing of Integrated Circuits from the Backside

Deprocessing of integrated circuits is often the final step for specific site electrical fault isolation in failure analysis. In FA cases with limited fault isolation data, as well as for reverse engineering for design verification and competitive analysis, the essential FA Lab process is layer-by-layer deprocessing, or “delayering”. Physical failure analysis methods for unveiling the site of root cause failure mechanisms for thorough analytical characterization will continue to require precisely controlled delayering once the failing node has been electrically isolated and the failing site verified via delayering and Nano Probing, AFP, etc. State of the art methods include mechanical parallel polishing, selected area milling, and FIB deprocessing. These techniques struggle to maintain a high success rate as semiconductor process nodes scale down due to the increased number of layers, a reduction in dielectric thickness, adoption of porous low k dielectrics, increased IC density, and smaller metal interconnect features. The high skill level (approaching artistry) required for mechanical lapping and freehand methods are typically time intensive and sub-micron accuracy/repeatability at exact sites is a challenge even for the most talented lab technician. Large area delayering has advanced recently via plasma source FIB-SEM deprocessing coupling high currents over large areas with new chemistries providing superior control and homogeneous material removal of heterogeneous materials in ICs, notably copper interconnects and porous silicon based dielectrics.

We now introduce a new concept based on plasma FIB deprocessing devices from the silicon substrate backside to enable a greater success rate on lower metal interconnects and high density transistor levels. A comparison of plasma FIB deprocessing from the interconnect side (frontside) to the backside deprocessing approach using samples ultrathinned in the packaged device is shown. Ultrathinning the silicon substrate significantly reduces the amount of time required and provides an even starting surface for deprocessing, making it possible to image most dense lower layers first while the sample is uniform, enabling larger volumes of the integrated circuit to be deprocessed with increased success rate, resolution and uniformity.

Introduction and Overview of Cryo-SEM and Cryo-FIB-SEM

This tutorial will explain the advantages of using cryo techniques when examining hydrated samples in the SEM. It will explain the different techniques of freezing, some of the equipment used and some of the problems that can be encountered.  This presentation will also describe the elements of why you might need a Cryo-SEM/FIB-SEM, and how these systems work.  It will also introduce Cryo FIB-SEM.